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Фотографии Часть # Акции Цены Количество Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3006PBF

IRFB3006PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

2047 4.92
- +

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Немедленный запрос

IRFB3006PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4228PBF

IRFB4228PBF

MOSFET N-CH 150V 83A TO220AB

Infineon Technologies

745 5.08
- +

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Немедленный запрос

IRFB4228PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFB3004PBF

IRFB3004PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

1807 5.36
- +

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Немедленный запрос

IRFB3004PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW90R500C3XKSA1

IPW90R500C3XKSA1

MOSFET N-CH 900V 11A TO247-3

Infineon Technologies

1155 5.66
- +

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Немедленный запрос

IPW90R500C3XKSA1

Datasheet

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099P7XKSA1

IPP60R099P7XKSA1

MOSFET N-CH 600V 31A TO220-3

Infineon Technologies

828 5.77
- +

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Немедленный запрос

IPP60R099P7XKSA1

Datasheet

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4004PBF

IRFP4004PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies

917 6.46
- +

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Немедленный запрос

IRFP4004PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP026N10NF2SAKMA1

IPP026N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

1448 6.60
- +

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Немедленный запрос

IPP026N10NF2SAKMA1

Datasheet

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 184A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP075N15N3GXKSA1

IPP075N15N3GXKSA1

MOSFET N-CH 150V 100A TO220-3

Infineon Technologies

979 6.76
- +

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Немедленный запрос

IPP075N15N3GXKSA1

Datasheet

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP20N60S5XKSA1

SPP20N60S5XKSA1

HIGH POWER_LEGACY

Infineon Technologies

1496 7.57
- +

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Немедленный запрос

SPP20N60S5XKSA1

Datasheet

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP030N10N3GXKSA1

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

2911 7.85
- +

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Немедленный запрос

IPP030N10N3GXKSA1

Datasheet

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R095C7XKSA1

IPW65R095C7XKSA1

MOSFET N-CH 650V 24A TO247

Infineon Technologies

1420 8.24
- +

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Немедленный запрос

IPW65R095C7XKSA1

Datasheet

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA075N15N3GXKSA1

IPA075N15N3GXKSA1

MOSFET N-CH 150V 43A TO220-3

Infineon Technologies

2733 8.52
- +

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Немедленный запрос

IPA075N15N3GXKSA1

Datasheet

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 8V, 10V 7.5mOhm @ 43A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7280 pF @ 75 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF300P227

IRF300P227

MOSFET N-CH 300V 50A TO247AC

Infineon Technologies

144 9.03
- +

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Немедленный запрос

IRF300P227

Datasheet

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 40mOhm @ 30A, 10V 4V @ 270µA 107 nC @ 10 V ±20V 4893 pF @ 50 V - 313W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1

MOSFET N-CH 650V 31A TO247-3

Infineon Technologies

877 9.07
- +

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Немедленный запрос

IPW60R070CFD7XKSA1

Datasheet

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-3

Infineon Technologies

101 9.62
- +

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Немедленный запрос

IMW120R350M1HXKSA1

Datasheet

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) 15V, 18V 455mOhm @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V 182 pF @ 800 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R220M1HXKSA1

IMW120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-3

Infineon Technologies

210 10.45
- +

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Немедленный запрос

IMW120R220M1HXKSA1

Datasheet

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) 15V, 18V 286mOhm @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V 289 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R060C7XKSA1

IPP60R060C7XKSA1

MOSFET N-CH 600V 35A TO220-3

Infineon Technologies

347 10.87
- +

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Немедленный запрос

IPP60R060C7XKSA1

Datasheet

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R090M1HXKSA1

IMW120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-3

Infineon Technologies

370 13.15
- +

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Немедленный запрос

IMW120R090M1HXKSA1

Datasheet

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R041CFD7XKSA1

IPP65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies

144 13.77
- +

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Немедленный запрос

IPP65R041CFD7XKSA1

Datasheet

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R090M1HXKSA1

IMZ120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-4

Infineon Technologies

355 15.13
- +

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Немедленный запрос

IMZ120R090M1HXKSA1

Datasheet

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
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